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This dissertation introduces a series of digital CIM circuits and architectures that significantly improve power, performance, and area (PPA) metrics for data-intensive workloads. It begins with a programmable CIM design that balances the flexibility of Central-Processing-Units(CPUs)/Graphics Processing Units(GPUs) with the efficiency of ASICs, enabling a broad class of applications. A prototype 28nm CMOS chip is then presented to accelerate general matrix-matrix multiplications (GEMMs) across various fixed-point precisions. The focus then shifts to sparse GEMM acceleration. The first design demonistrates how CIM tailored for channel decoders leverages both fixed and unstructured sparsity to outperform conventional designs. The second design, fabricated in 28nm CMOS, supports diverse unstructured sparse formats and integer precisions, efficiently targeting highly sparse deep neural networks (DNNs). The final design achieves state-of-the-art efficiency in compressed sparse GEMMs, supporting both integer and floating-point data types using shared hardware. It also integrates a RISC-V CPU to manage computation across diverse matrix sizes and model types. Together, these contributions advance CIM as a scalable and efficient platform for future AI and data-centric systems. 

With the rapid advancement of DNNs, numerous Process-in-Memory (PIM) architectures based on various memory technologies (Non-Volatile (NVM)/Volatile Memory) have been developed to accelerate AI workloads. Magnetic Random Access Memory (MRAM) is highly promising among NVMs due to its zero standby leakage, fast write/read speeds, CMOS compatibility, and high memory density. However, existing MRAM technologies such as spin-transfer torque MRAM (STT-MRAM) and spin-orbit torque MRAM (SOT-MRAM), have inherent limitations. STT-MRAM faces high write current requirements, while SOT-MRAM introduces significant area overhead due to additional access transistors. The new STT-assisted-SOT (SAS) MRAM provides an area-efficient alternative by sharing one write access transistor for multiple magnetic tunnel junctions (MTJs). This work presents the first fully digital processing-in-SAS-MRAM system to enable 8-bit floating-point (FP8) neural network inference with an application in on-device session-based recommender system. A SAS-MRAM device prototype is fabricated with 4 MTJs sharing the same SOT metal line. The proposed SAS-MRAM-based PIM macro is designed in TSMC 28nm technology. It achieves 15.31 TOPS/W energy efficiency and 269 GOPS performance for FP8 operations at 700 MHz. Compared to state-of-the-art recommender systems for the same popular YooChoose dataset, it demonstrates a 86 ×, 1.8 ×, and 1.12 × higher energy efficiency than that of GPU, SRAM-PIM, and ReRAM-PIM, respectively. 

With the prosperous development of Deep Neural Network (DNNs), numerous Process-In-Memory (PIM) designs have emerged to accelerate DNN models with exceptional throughput and energy-efficiency. PIM accelerators based on Non-Volatile Memory (NVM) or volatile memory offer distinct advantages for computational efficiency and performance. NVM based PIM accelerators, demonstrated success in DNN inference, face limitations in on-device learning due to high write energy, latency, and instability. Conversely, fast volatile memories, like SRAM, offer rapid read/write operations for DNN training, but suffer from significant leakage currents and large memory footprints. In this paper, for the first time, we present a fully-digital sparse processing in hybrid NVM-SRAM design, synergistically combines the strengths of NVM and SRAM, tailored for on-device continual learning. Our designed NVM and SRAM based PIM circuit macros could support both storage and processing of N:M structured sparsity pattern, significantly improving the storage and computing efficiency. Exhaustive experiments demonstrate that our hybrid system effectively reduces area and power consumption while maintaining high accuracy, offering a scalable and versatile solution for on-device continual learning. 

Deep neural networks (DNNs) have experienced unprecedented success in a variety of cognitive tasks due to which there has been a move to deploy DNNs in edge devices. DNNs are usually comprised of multiply-and-accumulate (MAC) operations and are both data and compute intensive. In-memory computing (IMC) methodologies have shown significant energy efficiency and throughput benefits for DNN workloads by reducing data movement and eliminating memory reads. Weight pruning in DNNs can further improve the energy/throughput of DNN hardware through reduced storage and compute. Recent IMC works [1]–[3], [6] have not explored such sparse compression techniques unlike ASIC counterparts to enable storage benefits and compute skipping. A recent work [4] attempted to exploit this by compressing weights using a binary map and a custom compression format. This is sub-optimal because the implementation requires a complex routing mechanism (butterfly routing), additional compute to decode compressed weights and has limited flexibility in supporting different sparse encodings. Fig. 1 illustrates our motivations and the challenges for implementing weight compression in digital IMC designs and the need for a new methodology to enable sparse compute directly on compressed weights. In this work, we present a novel sparsity-integrated IMC (SP-IMC) macro in 28nm CMOS which, for the first time, utilizes three popular sparse compression formats, i.e., coordinate representation (COO), run length encoding (RL) and N:m sparsity [7] all along the matrix column direction with tunable precisions. SP-IMC stores and directly processes the sparse compressed weights in the macro, achieving higher storage density, reduction in re-write operations to the macro and higher overall energy efficiency. 

This work presents the first resistive random access memory (RRAM)-based compute-in-memory (CIM) macro design tailored for genome processing. We analyze and demonstrate two key types of genome processing applications using our developed CIM chip prototype: the state-of-the-art (SOTA) burrows–wheeler transform (BWT)-based DNA short- read alignment and alignment-free mRNA quantification. Our CIM macro is designed and optimized to support the major functions essential to these algorithms, e.g., parallel XNOR operations, count, addition, and parallel bit-wise and operations. The proposed CIM macro prototype is fabricated with monolithic integration of HfO2 RRAM and 65-nm CMOS, achieving 2.07 TOPS/W (tera-operations per second per watt) and 2.12 G suffixes/J (suffixes per joule) at 1.0 V, which is the most energy-efficient solution to date for genome processing. 

Due to the separate memory and computation units in traditional Von-Neumann architecture, massive data transfer dominates the overall computing system’s power and latency, known as the ‘Memory-Wall’ issue. Especially with ever-increasing deep learning-based AI model size and computing complexity, it becomes the bottleneck for state-of-the-art AI computing systems. To address this challenge, In-Memory Computing (IMC) based Neural Network accelerators have been widely investigated to support AI computing within memory. However, most of those works focus only on inference. The on-device training and continual learning have not been well explored yet. In this work, for the first time, we introduce on-device continual learning with STT-assisted-SOT (SAS) Magnetic Random Access Memory (MRAM) based IMC system. On the hardware side, we have fabricated a SAS-MRAM device prototype with 4 Magnetic Tunnel Junctions (MTJ, each at 100nm × 50nm) sharing a common heavy metal layer, achieving significantly improved memory writing and area efficiency compared to traditional SOT-MRAM. Next, we designed fully digital IMC circuits with our SAS-MRAM to support both neural network inference and on-device learning. To enable efficient on-device continual learning for new task data, we present an 8-bit integer (INT8) based continual learning algorithm that utilizes our SAS-MRAM IMC-supported bit-serial digital in-memory convolution operations to train a small parallel reprogramming Network (Rep-Net) while freezing the major backbone model. Extensive studies have been presented based on our fabricated SAS-MRAM device prototype, cross-layer device-circuit benchmarking and simulation, as well as the on-device continual learning system evaluation. 

We present a fully digital multiply and accumulate (MAC) in-memory computing (IMC) macro demonstrating one of the fastest flexible precision integer-based MACs to date. The design boasts a new bit-parallel architecture enabled by a 10T bit-cell capable of four AND operations and a decomposed precision data flow that decreases the number of shift–accumulate operations, bringing down the overall adder hardware cost by 1.57× while maintaining 100% utilization for all supported precision. It also employs a carry save adder tree that saves 21% of adder hardware. The 28-nm prototype chip achieves a speed-up of 2.6× , 10.8× , 2.42× , and 3.22× over prior SoTA in 1bW:1bI, 1bW:4bI, 4bW:4bI, and 8bW:8bI MACs, respectively. 

Channel decoders are key computing modules in wired/wireless communication systems. Recently neural network (NN)-based decoders have shown their promising error-correcting performance because of their end-to-end learning capability. However, compared with the traditional approaches, the emerging neural belief propagation (NBP) solution suffers higher storage and computational complexity, limiting its hardware performance. To address this challenge and develop a channel decoder that can achieve high decoding performance and hardware performance simultaneously, in this paper we take a first step towards exploring SRAM-based in-memory computing for efficient NBP channel decoding. We first analyze the unique sparsity pattern in the NBP processing, and then propose an efficient and fully Digital Sparse In-Memory Matrix vector Multiplier (DSPIMM) computing platform. Extensive experiments demonstrate that our proposed DSPIMM achieves significantly higher energy efficiency and throughput than the state-of-the-art counterparts.